Large Wafer Topography Measurement

Modeling, Measurement, and Standards for Wafer Inspection

The major technical issues regarding the calibration of Surface Scanning Inspection Systems (SSIS) are presented including descriptions of the salient features of SSISs and the deposition system using the differential mobility analyzer. The role of the NIST SRM 1963 (100 nm) as a calibration standard is discussed. Data from round robin experiments, which NIST has helped the SEMI SSIS Task Forc...

Radiation pattern measurement method for on-wafer mm-wave antenna

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W-band Woi13e Figure Measurement Designed Fofl On-wafer Characterisation

The first fully automated noise and S-parameter measurement bench is reported for W-band on-wafer characterisation. A calibration procedure is described that allows the receiver reference plane tc, be accurately moved to i:he probe tip.

Application of IVS Overlay Measurement to Wafer Deformation Characterization Study

This work revealed one of the applications of overlay error measurement on investigation of GaAs wafer distortion during the normal high-temperature thermal process (above 800°C), using IVS overlay system. The results showed good correlation between the IVS overlay measurement and the temperature variation maps of the wafers obtained from temperature graduation experiments and electrical tests....

Direct Measurement of Wafer Temperature in White/UV LED Manufacture